Ga4 Ni2 O8 — Properties & Data | MatWorld

Ga4 Ni2 O8

semiconductor

· Ga4 Ni2 O8

Ga₄Ni₂O₈ is a mixed-metal oxide semiconductor compound combining gallium and nickel in a spinel-related crystal structure. This material is primarily of research interest rather than established industrial production, studied for its potential in optoelectronic and catalytic applications due to the semiconducting properties arising from the gallium-nickel oxide system. The compound represents exploration within the broader family of ternary oxide semiconductors, where composition tuning between metallic and oxygen bonding can yield tunable bandgaps and catalytic activity.

experimental semiconductor researchcatalytic materials developmentoptoelectronic device prototypingmetal oxide thin filmsphotocatalysis researchhigh-temperature ceramics exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1443	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.662	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 Ni2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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