Ga4 Ba1
semiconductorGa₄Ba₁ is an experimental intermetallic compound combining gallium and barium, belonging to the broader class of III-V and alkaline-earth semiconductor materials. This material is primarily of research interest rather than established in commercial production, with potential applications in optoelectronics and high-temperature semiconductor devices where the combination of gallium's semiconductor properties and barium's electropositive nature may offer unique electronic or structural characteristics. Engineers would consider this compound for exploratory work in next-generation semiconductor systems, though material availability, reproducibility, and competing established alternatives (such as GaAs or GaN) currently limit practical adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |