Gallium phosphide (Ga₃P) is a III-V compound semiconductor ceramic, part of the gallium phosphide family of materials used in optoelectronic and high-frequency applications. This material is investigated primarily in research and specialized industrial contexts for its potential in light-emitting devices, photodetectors, and integrated circuits where its electronic and optical properties offer advantages over more common semiconductors. Ga₃P is notable for its wide bandgap and high thermal stability, making it of interest for UV-visible optoelectronics and high-temperature or high-power semiconductor applications where conventional materials reach their limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.134 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1935 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.02197 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data