Ga3N
ceramic· JVASP-122682· Ga3N
Gallium nitride (Ga₃N) is a wide-bandgap III-V semiconductor ceramic compound used primarily in high-frequency and high-power electronic applications. It is employed in RF power amplifiers, microwave devices, and power conversion systems where its wide bandgap enables superior performance at high frequencies and temperatures compared to conventional silicon-based semiconductors. Ga₃N is particularly notable in 5G infrastructure, satellite communications, and power electronics where efficiency and thermal management are critical; it remains an active research material as the industry continues to optimize synthesis and device integration methods relative to the more established GaN (gallium nitride) phase.
RF power amplifiersmicrowave devices5G infrastructurepower conversion electronicssatellite communicationshigh-temperature electronics
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.