Ga3 Ge1

semiconductor

· Ga3 Ge1

Ga₃Ge₁ is a III-V semiconductor compound composed of gallium and germanium, belonging to the family of binary and ternary semiconductors used in optoelectronic and photonic device research. This material is primarily investigated in research and development contexts for potential applications in high-speed electronics and infrared photonics, where its bandgap and lattice properties may offer advantages over conventional GaAs or pure germanium for specific device architectures. The compound represents an experimental composition within the Ga-Ge material system, with applications contingent on successful integration into practical device structures.

infrared detectorshigh-speed transistorsphotonic integrated circuitsheterojunction researchoptoelectronic devicessemiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00270	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1250	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control