Ga3 B1 N4

semiconductor

· Ga3 B1 N4

Ga3B1N4 is an experimental wide-bandgap semiconductor compound combining gallium, boron, and nitrogen—representing a complex nitride material in the III-V semiconductor family. While not yet commercialized at scale, this compound is of research interest for high-temperature and high-power electronic applications, building on the established success of gallium nitride (GaN) and boron nitride (BN) in demanding aerospace and power conversion environments. Engineers would evaluate this material where extreme thermal stability, radiation resistance, or unique electrical properties could unlock new device architectures beyond conventional GaN/AlGaN systems.

high-temperature power electronicsradiation-hard semiconductorsaerospace/defense applicationsnext-generation wide-bandgap devicesresearch/prototype development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	213.6	GPa	—
Shear Modulus(G)	143.0	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.624	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5610	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3 B1 N4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control