Ga3 B1

semiconductor

· Ga3 B1

Ga₃B₁ is a gallium boride compound belonging to the III-V semiconductor family, combining gallium with boron in a fixed stoichiometric ratio. This material is primarily of research and development interest rather than established commercial production, with potential applications in wide-bandgap semiconductor devices and high-temperature electronics where conventional semiconductors reach performance limits. Gallium borides are explored as alternatives to gallium nitride (GaN) and silicon carbide (SiC) for next-generation power electronics and RF devices due to their theoretical thermal stability and electronic properties.

wide-bandgap semiconductorshigh-temperature electronicsresearch compoundspower device developmentRF/microwave applicationsnext-generation semiconductor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3 B1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control