Ga₂TeS₂ is a ternary semiconductor ceramic compound combining gallium, tellurium, and sulfur elements. This material belongs to the family of chalcogenide semiconductors and remains primarily in research and development stages, with potential applications in optoelectronic devices, infrared photonics, and solid-state sensing where mixed anion systems offer tunable bandgaps and thermal properties distinct from binary counterparts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.18 | GPa | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 20.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.224 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.072 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 10.30 | - | — | ||
| ↳ | 8.285 range 6.895–9.675median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5576 | C/m² | — | ||
Seebeck Coefficient(S) | -240.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6005 | eV/atom | — |