Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic material that exists in multiple crystal phases, with the monoclinic β-phase being the most thermally stable form. While not yet widely commercialized, Ga₂O₃ is an active area of research for next-generation power electronics and optoelectronic applications, offering superior breakdown field strength compared to conventional semiconductors like silicon and gallium nitride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.3 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 92.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 12.49 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6660 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 98.29 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -369.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08380 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1333 | eV/atom | — |