Ga₂Te₅ is a III-VI semiconductor compound composed of gallium and tellurium, belonging to the narrow-bandgap semiconductor family. This material is primarily of research and development interest for infrared optics and photodetection applications, where its tellurium content enables sensitivity to longer wavelengths than traditional semiconductors like GaAs. Engineers investigating thermal imaging systems, infrared sensing, or specialized photonic devices may evaluate Ga₂Te₅ as an alternative to more established materials, though it remains less common in production than binary or ternary compounds due to synthesis complexity and material stability considerations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.62 | GPa | — | ||
Shear Modulus(G) | 18.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9558 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2250 | eV/atom | — |