Ga₂Te₂I₁₄ is an experimental mixed-halide semiconductor compound combining gallium, tellurium, and iodine in a layered structure. This material belongs to the family of halide perovskites and related semiconductors under active research for optoelectronic applications, particularly where tunable bandgap and enhanced stability compared to traditional halide perovskites are desired. The iodine-tellurium combination offers potential advantages in photovoltaic and photodetector devices, though this specific composition remains primarily in the research phase and is not yet established in mainstream industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9.922 | GPa | — | ||
Shear Modulus(G) | 4.213 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.556 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2520 | eV/atom | — |