Ga₂Sr₁Cd₂ is an experimental compound semiconductor composed of gallium, strontium, and cadmium. This ternary semiconductor belongs to the class of wide-bandgap or specialty semiconductors under investigation for optoelectronic and photonic device applications. As a research-phase material rather than a commercially established semiconductor, it represents exploration into novel compositions that may offer unique electronic properties or band structure engineering opportunities compared to binary semiconductors like GaAs or CdTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.00 | GPa | — | ||
Shear Modulus(G) | 28.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00950 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3820 | eV/atom | — |