Ga₂Se₂ is a III-VI semiconductor compound belonging to the gallium chalcogenide family, which exhibits direct bandgap characteristics useful for optoelectronic applications. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in infrared photonics, photodetectors, and next-generation solar devices where its bandgap and optical properties could offer advantages over conventional semiconductors. Gallium selenide compounds are explored as alternatives to more mature semiconductors when specific wavelength ranges or optical transparency windows are required.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.13 | GPa | — | ||
Shear Modulus(G) | 21.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8347 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5820 | eV/atom | — |