Ga₂Sb₂ is a III-V compound semiconductor belonging to the gallium antimonide material family, typically studied as a narrow-bandgap semiconductor for infrared and optoelectronic applications. This material exists primarily in research and development contexts, where it is investigated for mid-infrared emitters, detectors, and high-speed electronic devices that leverage the unique electronic properties of gallium-antimony systems. Engineers consider III-V semiconductors like gallium antimonide over silicon when thermal stability, high-frequency performance, or infrared sensitivity is critical to device function.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.91 | GPa | — | ||
Shear Modulus(G) | 29.11 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1330 | eV/atom | — |