Ga2 Mn2 F10 O4 H8

semiconductor

· Ga2 Mn2 F10 O4 H8

Ga₂Mn₂F₁₀O₄H₈ is a mixed-metal fluoride-oxide hydroxide compound containing gallium and manganese, representing an emerging class of hybrid inorganic semiconductors that combine fluoride and oxide frameworks. This material is primarily of research interest rather than established industrial production, studied for its potential in magnetic semiconductors and photocatalytic applications where the manganese centers can provide magnetic functionality while gallium contributes electronic properties. The compound's notable feature is the integration of fluoride (typically associated with high electronegativity and stability) with manganese oxides (known for variable oxidation states and magnetic behavior), making it relevant to researchers exploring new pathways in magnetoelectronic devices and photochemical processes.

experimental semiconductorsmagnetic materials researchphotocatalysis developmentspintronics applicationsmultifunctional oxidesfluoride-based compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5765	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.873	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 Mn2 F10 O4 H8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control