Ga₂I₆O₁₈ is an inorganic semiconductor compound composed of gallium, iodine, and oxygen. This material belongs to the family of mixed-halide oxides and represents an emerging research compound rather than an established commercial material; it is primarily of interest in photovoltaic and optoelectronic device development where halide perovskites and related structures are being explored for next-generation solar cells and light-emitting applications. The combination of heavy halides (iodine) with gallium oxide creates potential for tunable bandgap and charge transport properties, though the material remains in the experimental stage with applications still being evaluated in laboratory settings.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.20 | GPa | — | ||
Shear Modulus(G) | 23.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6740 | eV/atom | — |