Ga2 H10 N4 F4

semiconductor

· Ga2 H10 N4 F4

Ga₂H₁₀N₄F₄ is a gallium-nitrogen hydride compound with fluorine substitution, belonging to the family of III-V semiconductor materials and gallium nitride (GaN) derivatives. This appears to be a research-phase compound rather than a production material; compounds in this chemical space are being investigated for wide-bandgap semiconductor applications, potentially offering improved thermal stability and electrical performance compared to conventional silicon in high-power or high-frequency devices. The fluorine incorporation may be explored for tuning electronic properties or enhancing specific device characteristics in next-generation power electronics and RF applications.

wide-bandgap semiconductors (research)high-power electronics (exploratory)RF/microwave devices (development phase)gallium nitride compound variantsthermal management applications (potential)next-generation power converters (early stage)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.913	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9650	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 H10 N4 F4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control