Ga₂Ge₄Pb₃O₁₄ is a complex ternary oxide semiconductor combining gallium, germanium, and lead oxides, belonging to the family of mixed-metal oxide compounds studied for optoelectronic and photonic applications. This is a research-phase material rather than a commercialized engineering compound; compounds in this family are investigated primarily for their potential in nonlinear optical devices, scintillators, and radiation detection systems where the combination of heavy elements (Pb, Ge) and wide bandgap characteristics (Ga oxide) may offer advantageous optical or X-ray absorption properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.352 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.706 | eV/atom | — |