Ga₂Fe₂S₅ is a quaternary semiconductor compound combining gallium, iron, and sulfur elements, belonging to the family of multinary chalcogenide semiconductors. This material is primarily of research interest for photovoltaic and optoelectronic applications, where its tunable bandgap and mixed-metal composition offer potential advantages in absorber layer design and cost reduction compared to conventional single-element semiconductors. The iron-gallium sulfide system remains an experimental platform for exploring earth-abundant alternatives to cadmium telluride and other conventional photovoltaic materials, though industrial deployment remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4850 | eV/atom | — |