Ga₂Au₂O₄ is a mixed-metal oxide semiconductor combining gallium and gold oxides, representing an experimental compound in the broader family of complex oxide semiconductors. This material remains primarily a research-phase compound with potential applications in optoelectronics and photocatalysis, where the combination of noble metal (Au) and wide-bandgap semiconductor (Ga-oxide) properties could enable unique charge transport or light-absorption characteristics not achievable in conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.298 | eV/atom | — |