Ga1Sb0.3As0.7

semiconductor

· Ga1Sb0.3As0.7

Ga₁Sb₀.₃As₀.₇ is a III-V compound semiconductor alloy combining gallium, antimony, and arsenic in a ternary composition. This material belongs to the GaAs-GaSb alloy family and is engineered to tune the bandgap between that of GaAs and GaSb, making it relevant for infrared optoelectronics and high-speed electronic devices. The specific antimony fraction (30%) positions this alloy for applications requiring mid-to-long wavelength infrared emission or detection, with potential advantages in thermal imaging, space-based sensing, and lattice-matched heterostructure design compared to binary III-V semiconductors.

infrared detectors and emittersthermophotovoltaic deviceshigh-electron-mobility transistors (HEMTs)space/satellite optoelectronicsquantum well structuresresearch-phase narrow-bandgap devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.3As0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control