Ga1Sb0.25As0.75
semiconductor· Ga1Sb0.25As0.75
Ga1Sb0.25As0.75 is a ternary III-V semiconductor alloy combining gallium antimonide and gallium arsenide in a 1:3 ratio, engineered to achieve intermediate bandgap and lattice parameters between its binary constituents. This material is primarily explored in research and specialized optoelectronic applications where tunable bandgap energies in the infrared region are required, offering a pathway to optimize performance in infrared detectors and thermophotovoltaic devices without the lattice mismatch constraints of direct GaAs or GaSb binaries.
infrared photodetectorsthermophotovoltaic cellshigh-speed electronics researchquantum well heterostructuresspace and defense optoelectronicsbandgap engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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