Ga1Sb0.25As0.75

semiconductor

· Ga1Sb0.25As0.75

Ga1Sb0.25As0.75 is a ternary III-V semiconductor alloy combining gallium antimonide and gallium arsenide in a 1:3 ratio, engineered to achieve intermediate bandgap and lattice parameters between its binary constituents. This material is primarily explored in research and specialized optoelectronic applications where tunable bandgap energies in the infrared region are required, offering a pathway to optimize performance in infrared detectors and thermophotovoltaic devices without the lattice mismatch constraints of direct GaAs or GaSb binaries.

infrared photodetectorsthermophotovoltaic cellshigh-speed electronics researchquantum well heterostructuresspace and defense optoelectronicsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1Sb0.25As0.75

Electrical Properties

Regulatory Screening

Environmental

Export Control