Ga1As0.99P0.01
semiconductor· Ga1As0.99P0.01
Ga₁As₀.₉₉P₀.₀₁ is a III-V compound semiconductor alloy—a gallium arsenide phosphide (GaAsP) material with minimal phosphorus doping that maintains the optoelectronic character of GaAs while introducing slight bandgap tuning. This material is primarily used in high-brightness optoelectronic devices where precise wavelength control and efficient light emission in the visible-to-near-infrared range are required, and is particularly valuable in LED and laser diode applications where small phosphorus additions enable wavelength engineering without the cost or complexity of larger compositional shifts.
High-brightness LEDsLaser diodes and photonic sourcesOptoelectronic integrated circuitsVisible spectrum emittersResearch optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.