Ga1As0.5P0.5

semiconductor

· Ga1As0.5P0.5

Ga₁As₀.₅P₀.₅ is a direct-bandgap III-V semiconductor alloy combining gallium arsenide and gallium phosphide in equal proportions, belonging to the family of ternary compound semiconductors used in optoelectronic devices. This material is primarily employed in light-emitting diodes (LEDs) and laser diodes across the visible to near-infrared spectrum, where its tunable bandgap energy allows engineers to optimize emission wavelength for specific applications. GaAsP is notable for offering a compromise between the direct bandgap efficiency of GaAs and the wider bandgap of GaP, making it particularly valuable for red and orange LEDs and in research contexts for integrated photonic circuits.

red/orange LEDsoptoelectronic deviceslaser diodesintegrated photonicsvisible light sourcessemiconductor heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—

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Regulatory Screening

Environmental

Export Control

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Ga1As0.5P0.5

Electrical Properties

Regulatory Screening

Environmental

Export Control