Ga1As0.4P0.6

semiconductor

· Ga1As0.4P0.6

Ga₁As₀.₄P₀.₆ is a ternary III-V direct bandgap semiconductor alloy composed of gallium, arsenic, and phosphorus. This material bridges the bandgap range between GaAs and GaP, making it useful for optoelectronic devices operating in the visible to near-infrared spectrum. It is employed in light-emitting diodes (LEDs) and photodetectors where moderate emission wavelengths and efficient carrier transport are required, offering a tunable alternative to binary compounds for wavelength-specific applications.

visible-spectrum LEDsoptoelectronic sensorsphotonic integrated circuitstelecommunicationsdisplay backlighting

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1As0.4P0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control