Ga1 Re1 As1

semiconductor

· Ga1 Re1 As1

GaReAs is a ternary III-V semiconductor compound combining gallium arsenide with rhenium doping or alloying. This material is primarily of research interest rather than a mature commercial product, explored for potential high-temperature and high-power electronic applications that leverage the wide bandgap and thermal stability properties of the III-V family. The rhenium incorporation is investigated to enhance performance in extreme environments where conventional GaAs reaches its operating limits.

High-temperature electronics (research)Wide-bandgap semiconductorsPower device developmentSpace and extreme environment applicationsIII-V compound researchAdvanced optoelectronics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00650	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.010	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 Re1 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control