Ga1 Re1 As1
semiconductor· Ga1 Re1 As1
GaReAs is a ternary III-V semiconductor compound combining gallium arsenide with rhenium doping or alloying. This material is primarily of research interest rather than a mature commercial product, explored for potential high-temperature and high-power electronic applications that leverage the wide bandgap and thermal stability properties of the III-V family. The rhenium incorporation is investigated to enhance performance in extreme environments where conventional GaAs reaches its operating limits.
High-temperature electronics (research)Wide-bandgap semiconductorsPower device developmentSpace and extreme environment applicationsIII-V compound researchAdvanced optoelectronics (exploratory)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.