Ga1Ge1Ru2 is an intermetallic semiconductor compound combining gallium, germanium, and ruthenium elements. This is a research-phase material explored for advanced electronic and photonic applications where the combination of group III (Ga), group IV (Ge), and transition metal (Ru) elements may enable tunable band gaps or unusual transport properties. While not yet in mainstream commercial production, intermetallic semiconductors of this type are investigated for next-generation devices requiring higher thermal stability or novel electronic behavior compared to conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 204.5 | GPa | — | ||
Shear Modulus(G) | 74.18 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2240 | eV/atom | — |