Ga1.1Sb0.9Te0.3

semiconductor

· Ga1.1Sb0.9Te0.3

Ga₁.₁Sb₀.₉Te₀.₃ is a ternary III-V semiconductor alloy combining gallium antimonide with tellurium doping, designed to engineer the bandgap and carrier transport properties of the GaSb base compound. This is primarily a research and development material rather than a production commodity; it belongs to the family of narrow-bandgap semiconductors used when thermal sensitivity, infrared responsivity, or high-mobility performance is critical. The tellurium alloying enables tuning of electronic and optical properties for specialized detector and optoelectronic applications where standard binary compounds (GaSb, InSb) do not provide the required performance window.

infrared detectorsthermal imaging sensorshigh-mobility electronicsquantum well heterostructuresresearch photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.1Sb0.9Te0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control