Ga1.1Sb0.9Se0.3

semiconductor

· Ga1.1Sb0.9Se0.3

Ga₁.₁Sb₀.₉Se₀.₃ is a quaternary III-V semiconductor alloy combining gallium antimonide (GaSb) with selenium doping or alloying. This composition sits in the infrared detector and thermal imaging material space, representing an experimental or specialized research compound rather than a commodity semiconductor. The material is investigated for mid-infrared and thermal detection applications where its bandgap and carrier properties offer potential advantages over binary GaSb or related alternatives like InSb.

infrared detectorsthermal imaging sensorsmid-infrared photodetectorsspace-based sensingresearch/development materialsoptoelectronic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.1Sb0.9Se0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control