Ga1.02Sb0.98Te0.06

semiconductor

· Ga1.02Sb0.98Te0.06

Ga₁.₀₂Sb₀.₉₈Te₀.₀₆ is a III-V semiconductor alloy based on gallium antimonide with minor tellurium doping, belonging to the family of narrow-bandgap semiconductors used in infrared and thermal imaging applications. This material is primarily of research and development interest for mid-infrared to far-infrared photodetectors and thermal sensing devices, where its narrow bandgap enables detection of longer wavelengths than conventional semiconductors. The tellurium addition modulates the electronic properties and bandgap of the GaSb host, making it relevant for tuning detector sensitivity in specialized imaging and spectroscopy systems where GaSb alone may not provide optimal performance.

infrared photodetectorsthermal imaging sensorsspectroscopy applicationsmilitary/defense sensingresearch semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

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Regulatory Screening

Environmental

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Ga1.02Sb0.98Te0.06

Electrical Properties

Regulatory Screening

Environmental

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