Ga0.9Hg0.1Sb0.9Te0.1

semiconductor

· Ga0.9Hg0.1Sb0.9Te0.1

Ga0.9Hg0.1Sb0.9Te0.1 is a quaternary III-V semiconductor alloy combining gallium antimonide (GaSb) and mercury telluride (HgTe) components, engineered to achieve specific bandgap and lattice properties intermediate between its parent compounds. This is a research-focused material rather than a widely commercialized alloy, developed primarily for infrared detector and optoelectronic applications where precise control of the narrow bandgap is required. The material's HgTe content confers semimetal-like electronic properties, making it particularly relevant for long-wavelength infrared sensing and narrow-gap device engineering, though it requires careful thermal and compositional management compared to more stable binary or ternary alternatives.

infrared detectorslong-wavelength IR opticsnarrow-bandgap semiconductorsresearch photonicscryogenic sensing devicesexperimental thermoelectrics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.9Hg0.1Sb0.9Te0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control