Ga0.99Sb0.99Zn0.01Te0.01

semiconductor

· Ga0.99Sb0.99Zn0.01Te0.01

Ga0.99Sb0.99Zn0.01Te0.01 is a quaternary III-V semiconductor alloy based on gallium antimonide with small additions of zinc and tellurium dopants. This is a research-phase material designed to modify the electronic and thermal properties of GaSb for specialized optoelectronic and infrared detector applications. The zinc and tellurium dopants are typically introduced to tune bandgap, carrier concentration, or lattice properties, making this alloy relevant for mid-infrared sensing, thermal imaging, or high-temperature semiconductor device development where standard binary or ternary GaSb may not meet performance targets.

infrared detectorsthermal imaging sensorsoptoelectronic devicesresearch semiconductorshigh-temperature electronicsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99Sb0.99Zn0.01Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control