Ga0.99Hg0.01Sb0.99Te0.01

semiconductor

· Ga0.99Hg0.01Sb0.99Te0.01

Ga0.99Hg0.01Sb0.99Te0.01 is a quaternary III-V semiconductor alloy based on the GaSb-GaTe system with minor mercury doping, designed to engineer the band gap and lattice parameters for infrared optoelectronic applications. This material family is primarily explored in research contexts for tuning electronic and optical properties in the mid- to long-wavelength infrared range, where it competes with established systems like HgCdTe and InSb for thermal imaging, gas sensing, and space-based spectroscopy. The precise compositional control offers potential advantages in lattice matching and thermal stability compared to binary or simpler ternary alternatives, making it relevant for next-generation infrared detectors and emitters where band gap engineering is critical.

infrared detectorsthermal imaging sensorsmid-wave infrared (MWIR) optoelectronicsspace-based spectroscopygas sensingband gap engineering research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99Hg0.01Sb0.99Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control