Ga0.99Al0.01P

semiconductor

· Ga0.99Al0.01P

Ga₀.₉₉Al₀.₀₁P is a III-V direct bandgap semiconductor alloy—a gallium phosphide (GaP) lattice with minimal aluminum doping—used primarily in optoelectronic devices where efficient light emission and detection are required. This material is commonly found in red and infrared LEDs, solar cells, and integrated photonic applications where its direct bandgap and lattice compatibility with GaP substrates enable reliable performance. The small aluminum fraction allows fine-tuning of the bandgap energy relative to pure GaP, making it valuable for wavelength engineering in lighting and sensing systems where conventional silicon cannot operate efficiently.

red and infrared LEDsphotovoltaic devicesintegrated photonicsoptoelectronic sensorsIII-V semiconductor heterostructureswavelength-specific light emission

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.270	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99Al0.01P

Electrical Properties

Regulatory Screening

Environmental

Export Control