Ga0.95Sb0.95Zn0.05Te0.05
semiconductorGa0.95Sb0.95Zn0.05Te0.05 is a quaternary III-V semiconductor alloy based on gallium antimonide with small additions of zinc and tellurium dopants, engineered to modify electronic and optical properties for specialized device applications. This material belongs to the GaSb family—a narrow-bandgap semiconductor platform widely used in infrared optoelectronics—with zinc and tellurium additions tuning carrier concentration and band structure for specific detector or emitter designs. The composition sits at the research/development stage rather than mature production, targeting applications where conventional GaSb or related alloys require property refinement for mid-to-long-wavelength infrared sensing or high-speed electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |