Ga0.95Sb0.95Hg0.05Te0.05

semiconductor

· Ga0.95Sb0.95Hg0.05Te0.05

Ga0.95Sb0.95Hg0.05Te0.05 is a quaternary III-V semiconductor alloy combining gallium antimonide with small additions of mercury and tellurium, designed to engineer the bandgap and lattice parameters for infrared optoelectronic applications. This material belongs to the mercury-containing narrow-bandgap semiconductor family and is primarily investigated for mid-wave and long-wave infrared detectors and emitters operating at cryogenic to moderate temperatures. The mercury and tellurium dopants reduce the effective bandgap compared to GaSb, making this composition relevant for thermal imaging, military surveillance systems, and scientific instrumentation where sensitivity to longer infrared wavelengths is critical.

infrared detectorsthermal imaging sensorsmilitary surveillance opticscryogenic photodetectorsinfrared emittersresearch-stage compound

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.95Sb0.95Hg0.05Te0.05

Electrical Properties

Regulatory Screening

Environmental

Export Control