Ga0.95Hg0.05Sb0.95Te0.05

semiconductor

· Ga0.95Hg0.05Sb0.95Te0.05

Ga0.95Hg0.05Sb0.95Te0.05 is a narrow-bandgap III-V semiconductor alloy based on gallium antimonide (GaSb) with mercury and tellurium additions, designed to operate in the infrared spectral region. This ternary/quaternary compound is primarily of research and specialized commercial interest for infrared detection and thermal imaging applications where tuned bandgap engineering enables response in specific wavelength windows. The mercury and tellurium dopants modify the electronic structure relative to binary GaSb, making this alloy relevant for applications requiring sensitivity in the mid-wave or long-wave infrared bands where traditional silicon detectors are insensitive.

infrared detectorsthermal imaging sensorsnight vision systemsresearch optoelectronicsspectroscopy instrumentationenvironmental monitoring

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.95Hg0.05Sb0.95Te0.05

Electrical Properties

Regulatory Screening

Environmental

Export Control