Ga0.8Sb0.8Zn0.2Te0.2
semiconductor· Ga0.8Sb0.8Zn0.2Te0.2
Ga0.8Sb0.8Zn0.2Te0.2 is a quaternary III-V semiconductor alloy combining gallium antimonide and zinc telluride constituents, engineered to tune bandgap and lattice properties for optoelectronic and thermal applications. This is primarily a research and development material used to explore intermediate bandgap semiconductors and thermoelectric devices where conventional binary compounds (GaSb, ZnTe) cannot achieve the required performance envelope. The quaternary composition allows precise control of electronic structure for infrared detectors, mid-IR LEDs, and solid-state cooling applications where bandgap engineering and thermal transport optimization are critical.
infrared detectorsmid-IR optoelectronicsthermoelectric coolingbandgap engineering researchthermal interface materialssemiconductor device prototyping
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.