Ga0.8Al0.2P

semiconductor

· Ga0.8Al0.2P

Ga₀.₈Al₀.₂P is a direct-bandgap III-V semiconductor alloy composed of gallium phosphide and aluminum phosphide, positioned between pure GaP and AlP in the compositional phase space. This material is used primarily in optoelectronic devices, particularly red and amber light-emitting diodes (LEDs) and infrared detectors, where its bandgap energy and direct transition characteristics enable efficient photon emission. The aluminum content raises the bandgap relative to pure GaP, shifting emission toward shorter wavelengths and improving lattice matching with certain substrates; this composition exemplifies the tunable bandgap strategy central to III-V semiconductor engineering.

Red and amber LEDsInfrared optoelectronicsLight-emitting devicesHeterojunction substratesHigh-brightness indicatorsResearch-phase photonic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.8Al0.2P

Electrical Properties

Regulatory Screening

Environmental

Export Control