Ga0.75P0.75Zn0.25Se0.25
semiconductorGa₀.₇₅P₀.₇₅Zn₀.₂₅Se₀.₂₅ is a quaternary III-V semiconductor alloy combining gallium phosphide, gallium arsenide family elements with zinc and selenium dopants, designed to engineer the bandgap and electronic properties for optoelectronic applications. This is primarily a research-phase material used to explore direct bandgap semiconductors with tunable wavelength performance; the zinc and selenium substitution into the GaP lattice allows precision control of optical and electrical characteristics compared to binary or ternary compounds. The material is notable in the context of experimental photovoltaic devices, light-emitting structures, and photodetectors where bandgap engineering is critical for matching specific wavelengths or improving conversion efficiency.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |