Ga0.5In0.5As

semiconductor

· Ga0.5In0.5As

Ga₀.₅In₀.₅As is a lattice-matched III-V semiconductor alloy combining gallium arsenide and indium arsenide in equal proportions, engineered to achieve a bandgap and lattice constant intermediate between its constituent binaries. This material is primarily used in high-speed optoelectronic and RF devices, particularly in heterojunction structures for infrared detectors, high-electron-mobility transistors (HEMTs), and integrated photonic circuits where lattice matching to InP substrates is critical for device performance and yield.

infrared photodetectorshigh-electron-mobility transistors (HEMTs)millimeter-wave RF circuitsoptical fiber communicationslattice-matched epitaxy on InPresearch-stage quantum devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.5In0.5As

Electrical Properties

Regulatory Screening

Environmental

Export Control