Ga0.5Al0.5As

semiconductor

· Ga0.5Al0.5As

Ga₀.₅Al₀.₅As is a III-V compound semiconductor alloy formed by combining gallium arsenide (GaAs) and aluminum arsenide (AlAs) in a 50/50 molar ratio. This direct bandgap material is engineered to achieve intermediate electronic and optical properties between its constituent binaries, making it valuable for optoelectronic and high-frequency devices where precise bandgap control is critical. The 50% aluminum composition positions this alloy in the range commonly used for lattice-matched heterostructures on GaAs substrates, enabling the fabrication of quantum wells, laser active regions, and high-electron-mobility transistors (HEMTs) with well-defined band offsets.

semiconductor lasers and LEDshigh-electron-mobility transistors (HEMTs)quantum well structuresoptoelectronic integrated circuitsmillimeter-wave RF devicesphotonic integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.5Al0.5As

Electrical Properties

Regulatory Screening

Environmental

Export Control