Ga0.4Al0.6P

semiconductor

· Ga0.4Al0.6P

Ga₀.₄Al₀.₆P is a direct-bandgap III-V compound semiconductor alloy that combines gallium phosphide and aluminum phosphide in a 40:60 molar ratio. This material is engineered for optoelectronic and high-frequency electronic applications where the bandgap energy and lattice properties of the GaP–AlP system offer advantages over binary compounds. It appears primarily in research and specialized industrial contexts for visible and near-infrared light emission, high-power RF devices, and heterostructure layers in advanced semiconductor devices.

LED emitters (red-green spectral range)High-electron-mobility transistors (HEMT)Laser diode heterostructuresRF and microwave power devicesOptoelectronic integrated circuitsResearch photonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.4Al0.6P

Electrical Properties

Regulatory Screening

Environmental

Export Control