Ga0.3P0.3Zn0.7Se0.7

semiconductor

· Ga0.3P0.3Zn0.7Se0.7

Ga0.3P0.3Zn0.7Se0.7 is a quaternary II-VI semiconductor alloy combining gallium phosphide and zinc selenide in a mixed-cation, mixed-anion structure. This is a research-stage compound designed to engineer the bandgap and lattice parameters for optoelectronic applications by blending the constituent binary semiconductors. The material belongs to the family of tunable wide-bandgap semiconductors that bridge traditional optoelectronic materials, offering potential for UV-to-visible photonic devices where bandgap engineering and lattice matching are critical.

UV photodetectorsvisible light LEDslaser diodesoptoelectronic heterostructuresbandgap engineering researchhigh-energy photonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.3P0.3Zn0.7Se0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control