Ga0.3As0.3Zn0.7Se0.7

semiconductor

· Ga0.3As0.3Zn0.7Se0.7

Ga₀.₃As₀.₃Zn₀.₇Se₀.₇ is a quaternary III-V semiconductor alloy combining gallium arsenide and zinc selenide constituents, engineered to achieve intermediate bandgap and lattice properties between its parent compounds. This research material is primarily investigated for optoelectronic applications where tunable energy bandgap and direct band-to-band transitions are required, particularly in the visible to near-infrared spectrum. The composition represents an experimental exploration of ternary and quaternary semiconductor space rather than an established commercial material, with potential relevance to developers of photonic devices, photodetectors, and light-emitting systems seeking alternatives to GaAs or ZnSe alone.

optoelectronic researchphotonic devicesphotodetectorslight-emitting applicationsbandgap engineeringsemiconductor heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.930	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.3As0.3Zn0.7Se0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control