Ga0.2In0.8As

semiconductor

· Ga0.2In0.8As

Ga₀.₂In₀.₈As is a ternary III-V compound semiconductor alloy composed of gallium, indium, and arsenic, engineered to achieve a direct bandgap in the near-infrared region. It is primarily used in optoelectronic and high-speed electronic devices where its lattice-matched or near-lattice-matched properties with InP substrates enable efficient epitaxial growth; notably employed in photodetectors, laser diodes, and integrated photonic circuits for telecommunications and sensing applications. This alloy is valued for its superior electron mobility and direct bandgap characteristics compared to binary alternatives, making it particularly relevant for long-wavelength infrared detection and high-frequency analog/mixed-signal integrated circuits.

infrared photodetectorsfiber-optic communicationshigh-speed integrated circuitslaser diodesphotonic integrated circuitsresearch-grade optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.2In0.8As

Electrical Properties

Regulatory Screening

Environmental

Export Control