Ga0.1P0.1Zn0.9Se0.9

semiconductor

· Ga0.1P0.1Zn0.9Se0.9

Ga₀.₁P₀.₁Zn₀.₉Se₀.₉ is a quaternary II-VI semiconductor alloy combining elements from Groups II and VI of the periodic table, representing a doped zinc selenide compound with gallium and phosphorus incorporation. This material is primarily explored in research and development contexts for optoelectronic and photonic device applications, where the bandgap engineering enabled by quaternary alloying offers tunable properties compared to binary or ternary alternatives like ZnSe or ZnS. The specific dopant concentrations suggest investigation into either luminescence enhancement, electrical conductivity modification, or wavelength-tuning for light-emitting or detecting applications in the visible to near-infrared spectrum.

optoelectronic researchwide-bandgap semiconductorsphotonic device developmentlight-emitting devicesbandgap engineeringexperimental compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.1P0.1Zn0.9Se0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control