Ga0.15As0.15Zn0.85Se0.85

semiconductor

· Ga0.15As0.15Zn0.85Se0.85

Ga₀.₁₅As₀.₁₅Zn₀.₈₅Se₀.₈₅ is a quaternary II-VI semiconductor alloy combining gallium arsenide and zinc selenide constituents, engineered for tunable optoelectronic properties across the visible to near-infrared spectrum. This is a research-phase material system used primarily in photonic device development, where the compositional flexibility allows tailoring of bandgap energy for specific wavelength applications. Engineers evaluate this alloy family when conventional binary semiconductors (GaAs, ZnSe) cannot meet wavelength, efficiency, or lattice-matching requirements for detector, emitter, or nonlinear optical applications.

optoelectronic detectorsphotonic integrated circuitstunable laser sourcesnonlinear optical devicesresearch-phase semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.15As0.15Zn0.85Se0.85

Electrical Properties

Regulatory Screening

Environmental

Export Control