Ga0.07Te1Pb0.93

semiconductor

· Ga0.07Te1Pb0.93

Ga₀.₀₇Te₁Pb₀.₉₃ is a narrow-bandgap semiconductor alloy based on lead telluride (PbTe) with gallium doping, belonging to the IV-VI narrow-gap semiconductor family. This material is primarily of research and development interest for infrared detection and thermoelectric energy conversion applications, where lead telluride compounds are valued for their sensitivity in the mid- to long-wavelength infrared spectrum and relatively high thermoelectric figures of merit at moderate temperatures.

infrared detectorsthermal imaging sensorsthermoelectric cooling deviceswaste heat recoveryresearch/developmental semiconductorsoptoelectronic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.07Te1Pb0.93

Electrical Properties

Regulatory Screening

Environmental

Export Control