Ga0.01P0.01Zn0.99Se0.99

semiconductor

· Ga0.01P0.01Zn0.99Se0.99

Ga0.01P0.01Zn0.99Se0.99 is a heavily zinc-selenide-based II-VI semiconductor alloy with minimal gallium and phosphorus doping, designed to modify the bandgap and electronic properties of the ZnSe host lattice. This is primarily a research and developmental material rather than a commercial standard, explored for optoelectronic devices where tuned bandgap and carrier dynamics are required. The dilute Ga and P incorporation into ZnSe is of interest for applications demanding precise control over light emission wavelengths, carrier mobility, or defect engineering in wide-bandgap semiconductor systems.

experimental optoelectronicstunable bandgap devicesblue/UV light emittersresearch photonic materialsII-VI semiconductor developmentquantum dot precursors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.01P0.01Zn0.99Se0.99

Electrical Properties

Regulatory Screening

Environmental

Export Control