Ga0.01P0.01Zn0.99Se0.99

semiconductor
· Ga0.01P0.01Zn0.99Se0.99

Ga0.01P0.01Zn0.99Se0.99 is a heavily zinc-selenide-based II-VI semiconductor alloy with minimal gallium and phosphorus doping, designed to modify the bandgap and electronic properties of the ZnSe host lattice. This is primarily a research and developmental material rather than a commercial standard, explored for optoelectronic devices where tuned bandgap and carrier dynamics are required. The dilute Ga and P incorporation into ZnSe is of interest for applications demanding precise control over light emission wavelengths, carrier mobility, or defect engineering in wide-bandgap semiconductor systems.

experimental optoelectronicstunable bandgap devicesblue/UV light emittersresearch photonic materialsII-VI semiconductor developmentquantum dot precursors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
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Regulatory Screening

Environmental

Export Control

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